Solid phase epitaxial growth of 3C–SiC thin film on Si and annihilation of nanopores-Reference-Cited by-同舟云学术

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Solid phase epitaxial growth of 3C–SiC thin film on Si and annihilation of nanopores

Published:2014-02 Issue: Volume:65 Page:418-424
ISSN:1359-6454
Container-title:Acta Materialia
language:en
Short-container-title:Acta Materialia

Author:

Goswami R.,Li C.H.,Jernigan G.G.,Thompson P.E.,Hellberg C.S.,Jonker B.T.

Publisher

Elsevier BV

Subject

Metals and Alloys,Polymers and Plastics,Ceramics and Composites,Electronic, Optical and Magnetic Materials

Reference32 articles.

1. Heteroepitaxial Growth of SiC on Si(100) and (111) by Chemical Vapor Deposition Using Trimethylsilane

2. Low‐temperature growth of SiC thin films on Si and 6H–SiC by solid‐source molecular beam epitaxy

3. Growth of high quality 6H‐SiC epitaxial films on vicinal (0001) 6H‐SiC wafers

4. Progress in epitaxial growth of SiC

5. SiC film formation on Si(001) by reaction with C2H2 beams

Cited by 9 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Chemoheteroepitaxy of 3C‐SiC(111) on Si(111): Influence of Predeposited Ge on Structure and Composition;physica status solidi (a);2021-10-31

2. Microcrystalline Structure and Light-Emitting Properties of 3C–SiC Island Films Grown on the Si(100) Surface;Physics of the Solid State;2019-07

3. Heteroepitaxial growth of thick 3C‐SiC (110) films by Laser CVD;Journal of the American Ceramic Society;2019-02-11

4. Impact of a SiGe interfacial layer on the growth of a SiC layer on Si with voids at the interface;Thin Solid Films;2018-09

5. Reconstruction of concentration profiles in heterostructures with chemically modified interfaces;Journal of Applied Physics;2018-06-07

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