Progress in epitaxial growth of SiC-Reference-Cited by-同舟云学术

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Progress in epitaxial growth of SiC

Published:1993-04 Issue:1-4 Volume:185 Page:65-74
ISSN:0921-4526
Container-title:Physica B: Condensed Matter
language:en
Short-container-title:Physica B: Condensed Matter

Author:

Matsunami Hiroyuki

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference23 articles.

1. Inst. Phys. Conf. Ser. No. 53;Pettenpaul,1980

2. Thin Films from Free Atoms and Particles;Matsunami,1985

3. IVA-8 heteroepitaxial growth of cubic silicon carbide on foreign substrates

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