Chemoheteroepitaxy of 3C‐SiC(111) on Si(111): Influence of Predeposited Ge on Structure and Composition-Reference-Cited by-同舟云学术

Chemoheteroepitaxy of 3C‐SiC(111) on Si(111): Influence of Predeposited Ge on Structure and Composition

Published:2021-10-31 Issue:24 Volume:218 Page:2100399
ISSN:1862-6300
Container-title:physica status solidi (a)
language:en
Short-container-title:Physica Status Solidi (a)

Author:

Zgheib Charbel¹,Lubov Maxim N.²,Kulikov Dmitri V.³,Kharlamov Vladimir S.³,Thiele Sebastian⁴,Morales Francisco M.⁵,Romanus Henry⁶,Rahbany Nancy¹,Beainy Georges¹,Stauden Thomas⁴,Pezoldt Jörg⁴^ORCID

Affiliation:

1. Department of Physics and Astronomy (DPA), Faculty of Natural Sciences & Applied Sciences Notre Dame University-Louaize P.O. Box 72 Zouk Mosbeh Lebanon

2. Nanoelectronic Laboratory Alferov University St. Petersburg 194021 Russian Federation

3. Laboratory of Theoretical Bases of Microelectronics Ioffe Institute 26 Politekhnicheskaya St. Petersburg 194021 Russian Federation

4. FG Nanotechnologie, Institut für Mikro- und Nanoelektronik and Institut für Mikro- und Nanotechnologien MacroNano® and Institut für Werkstofftechnik TU Ilmenau Postfach 100565 98684 Ilmenau Germany

5. Dpto. De Cience de los Materiales e Ingeneria Metallurgica y Quimica Inorganica Universidad de Cadiz Apdo. 40, Puerto Real 11510 Cadiz Spain

6. Zentrum für Mikro- und Nanotechnologien MacroNano TU Ilmenau Gustav-Kirchhoffstraße 7 98693 Ilmenau Germany

Publisher

Wiley

Subject

Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/pssa.202100399

Reference105 articles.

1. Etude cristallographique et magnetique de la serie MnxFe1−xHoO3

2. Silicon Carbide

3. Current status and perspectives of ultrahigh-voltage SiC power devices

4. Fundamentals of Silicon Carbide Technology

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