Heteroepitaxial growth of thick 3C‐SiC (110) films by Laser CVD-Reference-Cited by-同舟云学术

Heteroepitaxial growth of thick 3C‐SiC (110) films by Laser CVD

Published:2019-02-11 Issue:8 Volume:102 Page:4480-4491
ISSN:0002-7820
Container-title:Journal of the American Ceramic Society
language:en
Short-container-title:J Am Ceram Soc

Author:

Sun Qingyun¹,Yang Meijun¹,Li Jun²,Xu Qingfang¹,Tu Rong¹,Li Qizhong³,Zhang Song¹^ORCID,Zhang Lianmeng¹,Goto Takashi¹,Ohmori Hitoshi¹⁴,Kosinova Marina¹⁵

Affiliation:

1. State Key Laboratory of Advanced Technology for Materials Synthesis and Processing Wuhan University of Technology Wuhan China

2. National Key Laboratory for Shock Wave and Detonation Physics Institute of Fluid Physics Mianyang China

3. Hubei Key Laboratory of Advanced Technology for Automotive Components Wuhan University of Technology Wuhan China

4. Institute of Physical and Chemical Research Wako Japan

5. Nikolaev Institute of Inorganic Chemistry Russian Academy of Sciences Siberian Branch Novosibirsk Russia

Funder

Natural Science Foundation of Hubei Province

State Key Laboratory of Advanced Technology for Materials Synthesis and Processing

National Natural Science Foundation of China

Publisher

Wiley

Subject

Materials Chemistry,Ceramics and Composites

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1111/jace.16297

Reference40 articles.

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3. Fundamental piezoresistive coefficients of p-type single crystalline 3C-SiC

4. Critical temperature programs for surface carbonization of Si (111) and their effects on 3C‐SiC film growth;Giang Nguyen N;Jpn J Appl Phys,2013

5. High‐speed epitaxial growth of β‐SiC film on Si (111) single crystal by laser chemical vapor deposition;Zhang S;J Am Chem Soc,2012

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