Investigation of Al droplet wetting behavior on highly-oriented SiC-Reference-Cited by-同舟云学术

Investigation of Al droplet wetting behavior on highly-oriented SiC

Published:2023 Issue:38 Volume:13 Page:26869-26878
ISSN:2046-2069
Container-title:RSC Advances
language:en
Short-container-title:RSC Adv.

Author:

Zhang Song¹^ORCID,Zuo Kaixin²,Lu Pengjian²³,Xu Qingfang¹^ORCID,Yang Meijun¹,Liu Kai²,Tu Rong¹⁴^ORCID

Affiliation:

1. State Key Laboratory of Advanced Technology for Materials Synthesis and Processing, Wuhan University of Technology, 122 Luoshi Road, Wuhan 430070, People's Republic of China

2. School of Materials Science and Engineering, Wuhan University of Technology, 122 Luoshi Road, Wuhan 430070, People's Republic of China

3. Wuhan Tuocai Technology Co., Ltd, 147 Luoshi Road, Wuhan 430070, People's Republic of China

4. Chaozhou Branch of Chemistry and Chemical Engineering Guangdong Laboratory, Chaozhou 521000, People's Republic of China

Abstract

In the integrated circuit industry, metal liquids are frequently in contact with chemical vapor deposited (CVD) SiC, and it is important to understand the interactions between CVD-SiC and metal droplets.

Funder

National Key Research and Development Program of China

National Natural Science Foundation of China

Higher Education Discipline Innovation Project

Special Project for Research and Development in Key areas of Guangdong Province

Publisher

Royal Society of Chemistry (RSC)

Subject

General Chemical Engineering,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2023/RA/D3RA03335J

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