Low‐temperature growth of SiC thin films on Si and 6H–SiC by solid‐source molecular beam epitaxy-Reference-Cited by-同舟云学术

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Low‐temperature growth of SiC thin films on Si and 6H–SiC by solid‐source molecular beam epitaxy

Published:1995-06-05 Issue:23 Volume:66 Page:3182-3184
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Fissel A.,Schröter B.,Richter W.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.113716

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