Spatially Resolved Probabilities of Stacking Fault Formation in SiC Nanowires for Probing Growth Conditions-Reference-Cited by-同舟云学术

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Spatially Resolved Probabilities of Stacking Fault Formation in SiC Nanowires for Probing Growth Conditions

Published:2023-08-15 Issue:8 Volume:92 Page:
ISSN:0031-9015
Container-title:Journal of the Physical Society of Japan
language:en
Short-container-title:J. Phys. Soc. Jpn.

Author:

Kaneshige Masashi¹,Kohno Hideo²³

Affiliation:

1. Department of Engineering, Graduate School of Engineering, Kochi University of Technology, Kami, Kochi 782-8502, Japan

2. School of Engineering Science, Kochi University of Technology, Kami, Kochi 782-8502, Japan

3. Center for Nanotechnology, Kochi University of Technology, Kami, Kochi 782-8502, Japan

Publisher

Physical Society of Japan

Subject

General Physics and Astronomy

Link

https://journals.jps.jp/doi/pdf/10.7566/JPSJ.92.084601

Reference15 articles.

1. Ground-state properties of polytypes of silicon carbide

2. Structural and electronic properties of cubic, 2H, 4H, and 6HSiC

3. Stacking faults in group-IV crystals: Anab initiostudy

4. Stacking fault band structure in 4H–SiC and its impact on electronic devices

5. Antiphase‐domain‐free growth of cubic SiC on Si(100)

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