Author:
Miao M. S.,Limpijumnong Sukit,Lambrecht Walter R. L.
Subject
Physics and Astronomy (miscellaneous)
Cited by
170 articles.
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1. Exploring defect behavior in helium-irradiated single-crystal and nanocrystalline 3C-SiC at 800°C: A synergy of experimental and simulation techniques;Acta Materialia;2024-10
2. Stacking faults in 4H–SiC epilayers and IGBTs;Materials Science in Semiconductor Processing;2024-07
3. Review on Modeling and Mitigation of Bipolar Degradation in 4H-SiC;Power Electronic Devices and Components;2024-04
4. Characterization of partial dislocations for (3, 3, 4), (3, 3, 3, 3), and (3, 3, 2, 2, 4) stacking faults in 4H-SiC crystals;Journal of Crystal Growth;2023-12
5. First-principles investigation of the effects of excess carriers on the polytype stability and stacking fault energies of SiC;Journal of Applied Physics;2023-10-17