Author:
Miao M. S.,Limpijumnong Sukit,Lambrecht Walter R. L.
Subject
Physics and Astronomy (miscellaneous)
Cited by
167 articles.
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1. Characterization of partial dislocations for (3, 3, 4), (3, 3, 3, 3), and (3, 3, 2, 2, 4) stacking faults in 4H-SiC crystals;Journal of Crystal Growth;2023-12
2. First-principles investigation of the effects of excess carriers on the polytype stability and stacking fault energies of SiC;Journal of Applied Physics;2023-10-17
3. Spatially Resolved Probabilities of Stacking Fault Formation in SiC Nanowires for Probing Growth Conditions;Journal of the Physical Society of Japan;2023-08-15
4. Anomalous Diamagnetic Torque Signals in Topological Nodal-Line Semimetal NaAlSi;Journal of the Physical Society of Japan;2023-07-15
5. Effects of surface roughness and single Shockley stacking fault expansion on the electroluminescence of 4H-SiC;Optics Continuum;2023-04-24