4H to 3C Polytypic Transformation in Al+ Implanted SiC During High Temperature Annealing
Author:
Funder
Applied Materials Inc
University of Florida
Publisher
Springer Science and Business Media LLC
Subject
Electronic, Optical and Magnetic Materials
Link
https://link.springer.com/content/pdf/10.1007/s13391-023-00473-w.pdf
Reference54 articles.
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3. Zhu, J., Kim, H., Chen, H., Erickson, R., Maksimovic, D.: High efficiency SiC traction inverter for electric vehicle applications. In: 2018 IEEE Applied Power Electronic Conference Exposition. APEC, pp. 1428–1433 (2018)
4. Matsunami, H.: Fundamental research on semiconductor SiC and its applications to power electronics. Proc. Jpn. Acad. Ser. B 96, 235–254 (2020)
5. Tairov, Y.M., Tsvetkov, V.F.: Investigation of growth processes of ingots of silicon carbide single crystals. J. Cryst. Growth 43, 209–212 (1978)
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