Atomic-Step Observations on 6H- and 15R-SiC Polished Surfaces-Reference-Cited by-同舟云学术

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Atomic-Step Observations on 6H- and 15R-SiC Polished Surfaces

Published:2002-04 Issue: Volume:389-393 Page:729-732
ISSN:1662-9752
Container-title:Materials Science Forum
language:
Short-container-title:MSF

Author:

Vicente Patrice¹,Pernot Etienne²,Chaussende Didier²^ORCID,Camassel Jean¹

Affiliation:

1. Université Montpellier 2

2. UMR CNRS 5628, INP Grenoble-MINATEC

Publisher

Trans Tech Publications, Ltd.

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Link

https://www.scientific.net/MSF.389-393.729.pdf

Cited by 16 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. A sessile drop approach for studying 4H-SiC/liquid silicon high-temperature interface reconstructions;Journal of Materials Science;2022-01

2. Structural, chemical, and magnetic properties of cobalt intercalated graphene on silicon carbide;Nanotechnology;2018-11-01

3. Abrasive-Free Polishing of SiC Wafer Utilizing Catalyst Surface Reaction;ECS Transactions;2013-08-31

4. Planarization of SiC and GaN Wafers Using Polishing Technique Utilizing Catalyst Surface Reaction;ECS Journal of Solid State Science and Technology;2013

5. Initial stages of the ion-beam assisted epitaxial GaN film growth on 6H-SiC(0001);Thin Solid Films;2012-03

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