A sessile drop approach for studying 4H-SiC/liquid silicon high-temperature interface reconstructions
Author:
Funder
china scholarship council
Publisher
Springer Science and Business Media LLC
Subject
Mechanical Engineering,Mechanics of Materials,General Materials Science
Link
https://link.springer.com/content/pdf/10.1007/s10853-021-06816-y.pdf
Reference28 articles.
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5. Harada S, Yamamoto Y, Seki K et al (2013) Evolution of threading screw dislocation conversion during solution growth of 4H-SiC. Apl Mater 1:022109. https://doi.org/10.1063/1.4818357
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