From dissolution to controlled macrostepping of 4H-SiC during liquid Si-induced structuring in a sandwich configuration
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference20 articles.
1. Review of Silicon Carbide Processing for Power MOSFET;Langpoklakpam;Crystals,2022
2. Study of Carrier Mobilities in 4H-SiC MOSFETS Using Hall Analysis;Das;Materials,2022
3. Two-dimensional defect mapping of the SiO2/4H−SiC interface;Woerle;Phys. Rev. Mater.,2019
4. Nanoscale Mapping of Sub-Gap Electroluminescence from Step-Bunched, Oxidized 4H-SiC Surfaces;Alyabyeva;Phys. Status Solidi B,2023
5. Electron trapping at SiO2/4H-SiC interface probed by transient capacitance measurements and atomic resolution chemical analysis;Fiorenza;Nanotechnology,2018
Cited by 2 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Surface Structuring of Patterned 4H-SiC Surfaces Using a SiC/Si/SiC Sandwich Approach;Materials Science Forum;2024-08-21
2. Axial and composite ultrasonic vibration-assisted face grinding of silicon carbide ceramics: grinding force and surface quality;The International Journal of Advanced Manufacturing Technology;2023-08-01
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