Electron trapping at SiO2/4H-SiC interface probed by transient capacitance measurements and atomic resolution chemical analysis-Reference-Cited by-同舟云学术

Electron trapping at SiO2/4H-SiC interface probed by transient capacitance measurements and atomic resolution chemical analysis

Published:2018-07-18 Issue:39 Volume:29 Page:395702
ISSN:0957-4484
Container-title:Nanotechnology
language:
Short-container-title:Nanotechnology

Author:

Fiorenza Patrick^ORCID,Iucolano Ferdinando,Nicotra Giuseppe,Bongiorno Corrado,Deretzis Ioannis,La Magna Antonino,Giannazzo Filippo^ORCID,Saggio Mario,Spinella Corrado,Roccaforte Fabrizio^ORCID

Funder

ECSEL JU

Publisher

IOP Publishing

Subject

Electrical and Electronic Engineering,Mechanical Engineering,Mechanics of Materials,General Materials Science,General Chemistry,Bioengineering

Link

http://iopscience.iop.org/article/10.1088/1361-6528/aad129/pdf

Reference29 articles.

1. Material science and device physics in SiC technology for high-voltage power devices

2. Recent advances on dielectrics technology for SiC and GaN power devices

3. Threshold Voltage Instability in 4H-SiC MOSFETs With Phosphorus-Doped and Nitrided Gate Oxides

4. Basic Mechanisms of Threshold-Voltage Instability and Implications for Reliability Testing of SiC MOSFETs

5. Interfacial Defects in SiO2Revealed by Photon Stimulated Tunneling of Electrons

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1. Impact of the NO annealing duration on the SiO2/4H–SiC interface properties in lateral MOSFETs: The energetic profile of the near-interface-oxide traps;Materials Science in Semiconductor Processing;2024-01

2. Energy levels of carbon dangling-bond center (PbC center) at 4H-SiC(0001)/SiO2 interface;APL Materials;2023-11-01

3. From dissolution to controlled macrostepping of 4H-SiC during liquid Si-induced structuring in a sandwich configuration;Journal of Crystal Growth;2023-09

4. Atomic scale localization of Kohn–Sham wavefunction at SiO2/4H–SiC interface under electric field, deviating from envelope function by effective mass approximation;Applied Physics Letters;2023-05-29

5. Transport Phenomena during Liquid Si-Induced 4H-SiC Surface Structuring in a Sandwich Configuration;Solid State Phenomena;2023-05-25