Nanoscale Mapping of Sub‐Gap Electroluminescence from Step‐Bunched, Oxidized 4H‐SiC Surfaces-Reference-Cited by-同舟云学术

Nanoscale Mapping of Sub‐Gap Electroluminescence from Step‐Bunched, Oxidized 4H‐SiC Surfaces

Published:2022-11-09 Issue: Volume: Page:2200356
ISSN:0370-1972
Container-title:physica status solidi (b)
language:en
Short-container-title:Physica Status Solidi (b)

Author:

Alyabyeva Natalia¹^ORCID,Ding Jacques¹,Sauty Mylène¹^ORCID,Woerle Judith²³^ORCID,Jousseaume Yann⁴,Ferro Gabriel⁴^ORCID,McCallum Jeffrey C.⁵^ORCID,Peretti Jacques¹^ORCID,Johnson Brett C.⁶^ORCID,Rowe Alistair C. H.¹^ORCID

Affiliation:

1. Laboratoire de Physique de la Matière Condensée CNRS-Ecole Polytechnique Institut Polytechnique de Paris 91128 Palaiseau France

2. Paul Scherrer Institute Forschungsstrasse 111 5232 Villigen Switzerland

3. Advanced Power Semiconductor Laboratory ETH Zurich Physikstrasse 3 8092 Zurich Switzerland

4. Laboratoire des Multimatériaux et Interfaces (UMR 5615) Université de Lyon CNRS Université Claude Bernard Lyon 1 69622 Villeurbanne France

5. Physics Department The University of Melbourne Parkville 3052 Australia

6. CQC2T School of Engineering RMIT University Melbourne 3001 Australia

Funder

French National Research Agency

Simons Foundation

Publisher

Wiley

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/pssb.202200356

Reference17 articles.

1. A Review of SiC Power Module Packaging Technologies: Challenges, Advances, and Emerging Issues

2. Coherent control of single spins in silicon carbide at room temperature

3. Isolated electron spins in silicon carbide with millisecond coherence times

4. Activation and control of visible single defects in 4H-, 6H-, and 3C-SiC by oxidation

5. Single-photon emitting diode in silicon carbide

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2. Surface Structuring of Patterned 4H-SiC Surfaces Using a SiC/Si/SiC Sandwich Approach;Materials Science Forum;2024-08-21

3. From dissolution to controlled macrostepping of 4H-SiC during liquid Si-induced structuring in a sandwich configuration;Journal of Crystal Growth;2023-09