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Silicon carbide

Published:2019 Issue: Volume: Page:129-179
ISSN:
Container-title:Single Crystals of Electronic Materials
language:
Short-container-title:

Author:

Chaussende Didier,Ohtani Noboru

Publisher

Elsevier

Reference221 articles.

1. Power MOSFETs: Theory and Applications;Grant,1989

2. Fundamentals of Power Semiconductor Devices;Baliga,2010

3. Fundamentals of Silicon Carbide Technology: Growth, Characterization, Devices and Applications;Kimoto,2014

4. Investigation of growth processes of ingots of silicon carbide single crystals;Tairov;J. Cryst. Growth,1978

5. Bulk growth of large area SiC crystals;Powell;Mater. Sci. Forum,2016

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1. Investigation of amorphous-SiC thin film deposition by RF magnetron sputtering for optical applications;Materials Science in Semiconductor Processing;2024-11

2. Mechanical properties of Si_(1−x)–C_(x): strength and stiffness of materials using LAMMPS molecular dynamics simulation;Japanese Journal of Applied Physics;2024-08-01

3. Propagation behaviour of threading screw dislocations during 4H-SiC crystal growth using a hybrid method combined with solution growth and physical vapour transport growth on high-off-angle seeds;Journal of Crystal Growth;2024-05

4. Suppression of SiC Inclusions in 4H-SiC Crystals Grown from Si–Cr–C-Based Solution Saturated with SiC;Crystal Growth & Design;2024-03-06

5. Metal-assisted chemical etching beyond Si: applications to III–V compounds and wide-bandgap semiconductors;Nanoscale;2024

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