Evolution of threading screw dislocation conversion during solution growth of 4H-SiC
Author:
Publisher
AIP Publishing
Subject
General Engineering,General Materials Science
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4818357
Reference21 articles.
1. Step-controlled epitaxial growth of SiC: High quality homoepitaxy
2. Electrical Impact of SiC Structural Crystal Defects on High Electric Field Devices
3. Crystal quality of a 6H-SiC layer grown over macrodefects by liquid-phase epitaxy: a Raman spectroscopic study
4. Solution growth of single crystalline 6H, 4H-SiC using Si–Ti–C melt
5. High-quality and large-area 3C–SiC growth on 6H–SiC(0 0 0 1) seed crystal with top-seeded solution method
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3. Propagation behaviour of threading screw dislocations during 4H-SiC crystal growth using a hybrid method combined with solution growth and physical vapour transport growth on high-off-angle seeds;Journal of Crystal Growth;2024-05
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