Non-destructive identification of edge-component burgers vector of threading dislocations in SiC wafers by birefringence imaging

Author:

Harada Shunta,Matsubara Yasutaka,Murayama Kenta

Funder

New Energy and Industrial Technology Development Organization

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Materials Chemistry,Mechanical Engineering,General Chemistry,Electronic, Optical and Magnetic Materials

Reference36 articles.

1. Performance limiting micropipe defects in silicon carbide wafers;Neudeck;IEEE Electron Device Lett.,1994

2. Defect engineering in SiC technology for high-voltage power devices;Kimoto;Appl. Phys. Express,2020

3. Bulk and epitaxial growth of silicon carbide;Kimoto;Prog. Crystal Growth Charact. Mater.,2016

4. Correlation between reliability of thermal oxides and dislocations in n-type 4H-SiC epitaxial wafers;Senzaki;Appl. Phys. Lett.,2006

5. Influence of SiC epitaxial wafer quality on yield of 1.2kV SiC-DMOSFETs;Senzaki;IEEE Int. Rel. Phys. Symp. Proc.,2022

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