Fully unstrained GaN on sacrificial AlN layers by nano-heteroepitaxy
Author:
Publisher
Wiley
Subject
Condensed Matter Physics
Reference11 articles.
1. Growth and applications of Group III-nitrides
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3. Wet chemical etching of AlN in KOH solution
4. Pulsed mode operation of strained microelectromechanical resonators in air
5. High quality factor resonance at room temperature with nanostrings under high tensile stress
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