Low threading dislocation density aluminum nitride on silicon carbide through the use of reduced temperature interlayers-Reference-Cited by-同舟云学术

Low threading dislocation density aluminum nitride on silicon carbide through the use of reduced temperature interlayers

Published:2018-02 Issue: Volume:483 Page:134-139
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Foronda Humberto M.,Wu Feng,Zollner Christian,Alif Muhammad Esmed,Saifaddin Burhan,Almogbel Abdullah,Iza Michael,Nakamura Shuji,DenBaars Steven P.,Speck James S.

Funder

King Abdulaziz Center for Science and Technology and King Abdulaziz University of Science and Technology

Materials Research Laboratory and California Nanosystems Institute at UC Santa Barbara

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference22 articles.

1. Development and future of ultraviolet light-emitting diodes: UV-LED will replace the UV lamp

2. Nucleation and growth kinetics of AlN films on atomically smooth 6H–SiC (0001) surfaces

3. Threading dislocations in heteroepitaxial AlN layer grown by MOVPE on SiC (0001) substrate

4. Mechanisms of dislocation reduction in GaN using an intermediate temperature interlayer

5. Reduction of dislocations in GaN epilayers using templated three-dimensional coherent nanoislands

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