High-quality AlN nucleation layer on SiC substrate grown by MOVPE: Growth, structural and optical characteristics-Reference-Cited by-同舟云学术

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High-quality AlN nucleation layer on SiC substrate grown by MOVPE: Growth, structural and optical characteristics

Published:2022-04 Issue: Volume:278 Page:115635
ISSN:0921-5107
Container-title:Materials Science and Engineering: B
language:en
Short-container-title:Materials Science and Engineering: B

Author:

Narang Kapil,Pandey Akhilesh,Khan Ruby,Singh Vikash K.,Bag Rajesh K.,Padmavati M.V.G.,Tyagi Renu,Singh Rajendra

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference45 articles.

1. 200 nm deep ultraviolet photodetectors based on AlN;Li;Appl. Phys. Lett.,2006

2. An aluminium nitride light-emitting diode with a wavelength of 210 nanometres;Taniyasu;Nature.,2006

3. A GaN-SiC hybrid material for high-frequency and power electronics;Chen;Appl. Phys. Lett.,2018

4. Influence of AlN buffer on electronic properties and dislocation microstructure of AlGaN/GaN grown by molecular beam epitaxy on SiC;Simpkins;J. Vac. Sci. Technol. B Microelectron. Nanom. Struct.,2003

5. Harsh environment microtechnologies for NASA and terrestrial applications;George;Proc. IEEE Sensors.,2005

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Effects of gallium surfactant on AlN thin films by microwave plasma chemical vapor deposition;Journal of Semiconductors;2024-09-01

2. 2.5 A/mm/350 GHz aggressively scaled gate engineered Fe-doped AlN/GaN channel HEMT with graded InGaN Backbarrier on SiC-wafer for next generation RF power electronics applications;Materials Science and Engineering: B;2024-03

3. Effect of flux rate on the growth of AlN films on sapphire by MNVPE;Materials Science in Semiconductor Processing;2023-12

4. Introduction of dislocation filtering with different ammonia flows in low-temperature grown AlN (< 1200 °C);Micro and Nanostructures;2023-11

5. Structural, electrical, morphological, and interfacial characteristics of lattice-matched InAlN/GaN HEMT structure on SiC substrate;Journal of Applied Physics;2023-10-09

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