A GaN–SiC hybrid material for high-frequency and power electronics-Reference-Cited by-同舟云学术

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A GaN–SiC hybrid material for high-frequency and power electronics

Published:2018-07-23 Issue:4 Volume:113 Page:041605
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Chen Jr-Tai¹^ORCID,Bergsten Johan²,Lu Jun³,Janzén Erik¹,Thorsell Mattias²,Hultman Lars³^ORCID,Rorsman Niklas²^ORCID,Kordina Olof¹

Affiliation:

1. SweGaN AB, Teknikringen 8D, Linköping SE583-30, Sweden

2. Department of Microtechnology and Nanoscience, Chalmers University of Technology, Gothenburg SE412-96, Sweden

3. Department of Physics, Chemistry, and Biology (IFM), Linköping University, Linköping SE 581 83, Sweden

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.5042049

Reference20 articles.

1. Modeling of Threading Dislocation Reduction in Growing GaN Layers

2. Effects of Threading Dislocations on AlGaN/GaN High-Electron Mobility Transistors

3. GaN on Si Technologies for Power Switching Devices

4. Microstructure of GaN epitaxy on SiC using AlN buffer layers

5. Structural and morphological evolution of GaN grown by metalorganic chemical vapor deposition on SiC substrates using an AlN initial layer

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1. Characterization of Trapping Effects Related to Carbon Doping Level in AlGaN Back-Barriers for AlGaN/GaN HEMTs;IEEE Transactions on Electron Devices;2024-06

2. Analysis of Carrier Scattering Mechanisms in AlN/GaN HEMT Heterostructures with an Ultrathin AlN Barrier;Russian Microelectronics;2024-06

3. Thermally stable radio frequency power and noise behaviors of AlGaN/GaN high electron mobility transistor without voltage-blocking buffer layer design;Journal of Vacuum Science & Technology B;2024-05-31

4. Tailoring Electronic Properties of 6H‐SiC with Different Composition of Silicon by First‐Principles Calculations;Advanced Theory and Simulations;2024-04-30

5. Electron mobility enhancement by electric field engineering of AlN/GaN/AlN quantum-well HEMTs on single-crystal AlN substrates;Applied Physics Letters;2024-04-08

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