Structural and morphological evolution of GaN grown by metalorganic chemical vapor deposition on SiC substrates using an AlN initial layer
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference35 articles.
1. High-Power, Long-Lifetime InGaN/GaN/AlGaN-Based Laser Diodes Grown on Pure GaN Substrates
2. Effect of threading dislocations on AlGaN/GaN heterojunction bipolar transistors
3. Growth mechanism of GaN grown on sapphire with A1N buffer layer by MOVPE
4. GaN Growth Using GaN Buffer Layer
5. Dislocation generation in GaN heteroepitaxy
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