Dependence of defect structure on In concentration in InGaN epilayers grown on AlN/Si(111) substrate-Reference-Cited by-同舟云学术

Dependence of defect structure on In concentration in InGaN epilayers grown on AlN/Si(111) substrate

Published:2022 Issue:15 Volume:3 Page:6237-6245
ISSN:2633-5409
Container-title:Materials Advances
language:en
Short-container-title:Mater. Adv.

Author:

Chowdhury Arun Malla¹²^ORCID,Singh Deependra Kumar¹^ORCID,Roul Basanta¹³,Nanda K. K.¹⁴⁵,Krupanidhi S. B.¹

Affiliation:

1. Materials Research Centre, Indian Institute of Science, Bangalore-560012, India

2. Department of Physics, Syamsundar College, University of Burdwan, East Bardhaman, West Bengal 713424, India

3. Central Research Laboratory, Bharat Electronics, Bangalore 560013, India

4. Institute of Physics, Bhubaneswar, Odisha – 751005, India

5. Homi Bhabha National Institute, Mumbai, Maharashtra – 400094, India

Abstract

InGaN epilayers with different indium concentrations have been grown on 100-nm-thick AlN/n-Si(111) template using plasma assisted molecular beam epitaxy.

Funder

Council of Scientific and Industrial Research, India

Indian National Science Academy

University of Burdwan

Publisher

Royal Society of Chemistry (RSC)

Subject

General Materials Science,Chemistry (miscellaneous)

Link

http://pubs.rsc.org/en/content/articlepdf/2022/MA/D2MA00438K

Reference50 articles.

1. Nitride-based semiconductors for blue and green light-emitting devices

2. A Reliability Study on Green InGaN–GaN Light-Emitting Diodes

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4. InGaN/GaN multiple quantum well solar cells with long operating wavelengths

5. The properties of reversed polarization yellow InGaN-GaN MQWs in p-side down structure grown by metal–organic chemical vapor deposition on sapphire substrate