The properties of reversed polarization yellow InGaN-GaN MQWs in p-side down structure grown by metal–organic chemical vapor deposition on sapphire substrate-Reference-Cited by-同舟云学术

The properties of reversed polarization yellow InGaN-GaN MQWs in p-side down structure grown by metal–organic chemical vapor deposition on sapphire substrate

Published:2014-11 Issue: Volume:64 Page:57-62
ISSN:1386-9477
Container-title:Physica E: Low-dimensional Systems and Nanostructures
language:en
Short-container-title:Physica E: Low-dimensional Systems and Nanostructures

Author:

Zhang Kexiong,Liang Hongwei,Wang Dongsheng,Shen Rensheng,Guo Wenping,Deng Qunxiong,Liu Yang,Xia Xiaochuan,Luo Yingmin,Du Guotong

Funder

National Natural Science Foundation of China

National High Technology Research and Development Program (863 Program)

Fundamental Research Funds for the Central Universities

Doctoral Program of Higher Education

Publisher

Elsevier BV

Subject

Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference38 articles.

1. Generation of amber III-nitride based light emitting diodes by indium rich InGaN quantum dots with InGaN wetting layer and AlN encapsulation layer

2. Nonpolar and Semipolar III-Nitride Light-Emitting Diodes: Achievements and Challenges

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2. UV Light-Emitting Diode With Buried Polarization- Induced n-AlGaN/InGaN/p-AlGaN Tunneling Junction;IEEE Photonics Technology Letters;2021-08-15

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