Generation of amber III-nitride based light emitting diodes by indium rich InGaN quantum dots with InGaN wetting layer and AlN encapsulation layer
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3499618
Reference23 articles.
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2. White light generation with CdSe-ZnS nanocrystals coated on an InGaN-GaN quantum-well blue/Green two-wavelength light-emitting diode
3. White Light-Emitting Diodes with Excellent Color Rendering Based on Organically Capped CdSe Quantum Dots and Sr3SiO5:Ce3+,Li+Phosphors
4. Embodiment of the warm white-light-emitting diodes by using a Ba2+ codoped Sr3SiO5:Eu phosphor
5. 2-phosphor-converted white light-emitting diodes using oxynitride/nitride phosphors
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