Microstructure of GaN epitaxy on SiC using AlN buffer layers-Reference-Cited by-同舟云学术

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Microstructure of GaN epitaxy on SiC using AlN buffer layers

Published:1995-07-17 Issue:3 Volume:67 Page:410-412
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Ponce F. A.,Krusor B. S.,Major J. S.,Plano W. E.,Welch D. F.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.114645

Reference8 articles.

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