Microstructure of GaN epitaxy on SiC using AlN buffer layers
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.114645
Reference8 articles.
Cited by 217 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Current collapse suppression in AlGaN/GaN HEMTs using dual-layer SiNx stressor passivation;Applied Physics Letters;2023-06-05
2. Research on nano-scale AlN nucleation layer growth and GaN HEMT characteristics based on MOCVD technology;Journal of Crystal Growth;2023-05
3. Interlayer Investigations of GaN Heterostructures Integrated into Silicon Substrates by Surface Activated Bonding;Crystals;2023-01-24
4. Threading dislocation lines and their impact on bulk cubic boron nitride’s low-field electron transport response;Solid State Communications;2022-11
5. Strain effects on the behavior of intrinsic point defects within the GaN/AlN interface;International Journal of Modern Physics C;2022-06-09
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