Research on nano-scale AlN nucleation layer growth and GaN HEMT characteristics based on MOCVD technology-Reference-Cited by-同舟云学术

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Research on nano-scale AlN nucleation layer growth and GaN HEMT characteristics based on MOCVD technology

Published:2023-05 Issue: Volume:610 Page:127155
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Zhang Dongguo,Li Zhonghui,Guo Huaixin,Peng Daqing,Yang Qiankun,Li Chuanhao,Luo Weike

Funder

Jiangsu Provincial Key Research and Development Program

Jiangsu Province Department of Science and Technology

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference16 articles.

1. AlGaN/GaN HEMTs on SiC with over 100 GHz f/sub T/and low microwave noise;Lu;IEEE Trans. Electron Devices,2021

2. GaN Power Transistors on Si Substrates for Switching Applications

3. High frequency GaN HEMTs for RF MMIC applications;Micovic,2016

4. Analysis of the Breakdown Characterization Method in GaN-Based HEMTs

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Plasma power effect on crystallinity and density of AlN films deposited by plasma enhanced atomic layer deposition;Journal of Materials Research and Technology;2023-11

2. FPGA-Based Implementation of Reverse Electrical Pulse Stress and Measurement system for Gallium Nitride High-Electron-Mobility Transistors;Journal of Physics: Conference Series;2023-06-01

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