2.5 A/mm/350 GHz aggressively scaled gate engineered Fe-doped AlN/GaN channel HEMT with graded InGaN Backbarrier on SiC-wafer for next generation RF power electronics applications
Author:
Publisher
Elsevier BV
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science
Reference34 articles.
1. Challenges in material processing and reliability issues in AlGaN/GaN HEMTs on silicon wafers for future RF power electronics & switching applications: A critical review;Ajayan;Mater. Sci. Semicond. Process.,2022
2. Recent Developments in Materials, Architectures and Processing of AlGaN/GaN HEMTs for Future RF and Power Electronic Applications: A Critical Review;Mounika;Micro Nanostructures,2022
3. A critical review of AlGaN/GaN-heterostructure based Schottky diode/HEMT hydrogen (H2) sensors for aerospace and industrial applications;Ajayan;Measurement,2021
4. AlGaN-based metal–semiconductor–metal photodiodes fabricated with nonplanar structure geometry for ultraviolet light detection;Tsai;Mater. Sci. Semicond. Process.,2023
5. Analysis of Channel length, Gate length and Gate position Optimization of III-Nitride/β-Ga2O3 Nano-HEMT for High-Power Nanoelectronics and Terahertz Applications;Purnachandra Rao;Mater. Sci. Eng. B,2023
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