Challenges in material processing and reliability issues in AlGaN/GaN HEMTs on silicon wafers for future RF power electronics & switching applications: A critical review-Reference-Cited by-同舟云学术

Challenges in material processing and reliability issues in AlGaN/GaN HEMTs on silicon wafers for future RF power electronics & switching applications: A critical review

Published:2022-11 Issue: Volume:151 Page:106982
ISSN:1369-8001
Container-title:Materials Science in Semiconductor Processing
language:en
Short-container-title:Materials Science in Semiconductor Processing

Author:

Ajayan J.,Nirmal D.,Mohankumar P.,Mounika B.,Bhattacharya Sandip,Tayal Shubham,Fletcher A.S. Augustine

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference123 articles.

1. The effect of an Fe-doped GaN buffer on off-state breakdown characteristics in AlGaN/GaN HEMTs on Si substrate;Choi;IEEE Trans. Electron. Dev.,2006

2. Improved device performance in AlGaN/GaN HEMT by forming ohmic contact with laser annealing;Hou;IEEE Electron. Device Lett.,2018

3. High breakdown-voltage (>2200 V) AlGaN-channel HEMTs with ohmic/Schottky hybrid drains;Zhang;IEEE J. Electron. Device Soc.,2018

4. High breakdown voltage and low-current dispersion in AlGaN/GaN HEMTs with high-quality AlN buffer layer;Kim;IEEE Trans. Electron. Dev.,2021

5. Beyond thermal management: incorporating p- Diamond back-barriers and cap layers into AlGaN/GaN HEMTs;Zhang;IEEE Trans. Electron. Dev.,2016

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