Beyond Thermal Management: Incorporating p-Diamond Back-Barriers and Cap Layers Into AlGaN/GaN HEMTs-Reference-Cited by-同舟云学术

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Beyond Thermal Management: Incorporating p-Diamond Back-Barriers and Cap Layers Into AlGaN/GaN HEMTs

Published:2016-06 Issue:6 Volume:63 Page:2340-2345
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Zhang Yuhao^ORCID,Teo Koon Hoo,Palacios Tomas

Funder

ONR PECASE program

ARPA-E SWITCHES program

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/16/7473958/07458175.pdf?arnumber=7458175

Cited by 35 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Progress in the semiconductor/diamond heterogeneous integrations: Technical methods, interfacial phonon transport, and thermal characterizations;Surfaces and Interfaces;2024-03

2. Development of Diamond Device-Level Heat Spreader for the Advancement of GaN HEMT Power and RF Electronics;IEEE Transactions on Device and Materials Reliability;2023-12

3. Small signal and noise analysis of T-gate HEMT with polarization doped buffer for LNAs;Micro and Nanostructures;2023-08

4. Implementation and Applications of Grid-Forming Inverter with SiC for Power Grid Conditioning;IEEJ Journal of Industry Applications;2023-05-01

5. An intensive study on effects of lateral scaling and gate metals on the RF/DC performance of recessed T-gated Fe-doped AlN/GaN/SiC HEMTs for future RF and microwave power applications;Microelectronic Engineering;2023-03

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