Progress in the semiconductor/diamond heterogeneous integrations: Technical methods, interfacial phonon transport, and thermal characterizations
Author:
Funder
Xian Jiaotong University
National Key Research and Development Program of China
Publisher
Elsevier BV
Reference266 articles.
1. GaN-On-diamond HEMT technology With TAVG = 176°C at PDC, max = 56W/mm measured by transient Thermoreflectance imaging;Tadjer;IEEE Electr. Device Lett.,2019
2. Integration of polycrystalline diamond heat spreader with AlGaN/GaN HEMTs using a dry/wet combined etching process;Wu;Diam. Relat. Mater.,2023
3. Near-junction microfluidic cooling for GaN HEMT with capped diamond heat spreader;Zhang;Int. J. Heat Mass Transf.,2022
4. Reducing Kapitza resistance between graphene/water interface via interfacial superlattice structure;Peng;Nanotechnology,2022
5. Embedded cooling for wide bandgap power amplifiers: a review;Bar-Cohen;J. Electron. Packag.,2019
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1. Mechanical regulation to interfacial thermal transport in GaN/diamond heterostructures for thermal switch;Nanoscale Horizons;2024
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