Author:
Kumari Vandana,Pavan YVSS Prudhvi,Gupta Mridula,Saxena Manoj
Funder
Department of Science and Technology
Reference54 articles.
1. Analysis of low voltage RF power capability on AlGaN/GaN and InAlN/GaN HEMTs for terminal applications;Yuwei;IEEE J. Electron Devices Soc.,2021
2. Polarization induced doping and high-k passivation engineering on T-Gate MOS-HEMT for improved RF/microwave performance;Sharma;Mater. Sci. Eng. B,2023
3. Analysis of channel length, gate length and gate position optimization of III-nitride/β-Ga2O3 nano-HEMT for high-power nanoelectronics and terahertz applications;Rao;Mater. Sci. Eng. B,2023
4. “Enhanced drain current and cut off frequency in AlGaN/GaN HEMT with BGaN back barrier;Hamza;Mater. Sci. Eng. B,2022
5. 2.5 A/mm/350 GHz aggressively scaled gate engineered Fe-doped AlN/GaN channel HEMT with graded InGaN Backbarrier on SiC-wafer for next generation RF power electronics applications;Mounika;Mater. Sci. Eng. B,2024