Author:
Purnachandra Rao G.,Ranjan Lenka Trupti,Pham Trung Nguyen Hieu
Funder
Science and Engineering Research Board
Nano Mission
Department of Science and Technology, Ministry of Science and Technology, India
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science
Reference39 articles.
1. Metal-interconnection-free integration of InGaN/GaN light emitting diodes with AlGaN/GaN high electron mobility transistors;Liu;Appl. Phys. Lett.,2015
2. D. Garrido-DIez, I. Baraia, Review of wide bandgap materials and their impact in new power devices, in: Proc. 2017 IEEE Int. Work. Electron. Control. Meas. Signals their Appl. to Mechatronics, ECMSM 2017, pp. 1–6, 2017, doi: https://doi.org/10.1109/ECMSM.2017.7945876.
3. G. Purnachandra Rao , R. Singh , T.R. Lenka , Performance Analysis of AlGaN/GaN HEMT for RF and Microwave Nanoelectronics Applications , HEMT Technology and Applications , Springer Tracts in Electrical and Electronics Engineering, 2023 , pp. 139 – 153 , doi: 10.1007/978-981-19-2165–0_11.
4. Review of GaN HEMT applications in power converters over 500 W;Ma;Electron.,2019
5. Power-switching applications beyond silicon: The status and future prospects of SiC and GaN devices;Dimitrijev;Proc. Int. Conf. Microelectron.,2014
Cited by
14 articles.
订阅此论文施引文献
订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献