Metal-interconnection-free integration of InGaN/GaN light emitting diodes with AlGaN/GaN high electron mobility transistors
Author:
Affiliation:
1. Photonics Technology Center, Department of Electronic and Computer Engineering, Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong
Funder
The Research Grants Council of the Hong Kong Special Administrative Government under the Theme-Based Research Scheme
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4921049
Reference12 articles.
1. AlGaN/GaN HEMT With 300-GHz $f_{\max}$
2. Ultrathin Body InAlN/GaN HEMTs for High-Temperature (600$^{\circ} {\rm C}$) Electronics
3. Monolithic integration of light-emitting diodes and power metal-oxide-semiconductor channel high-electron-mobility transistors for light-emitting power integrated circuits in GaN on sapphire substrate
4. Monolithic integration of GaN-based light-emitting diodes and metal-oxide-semiconductor field-effect transistors
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