Monolithically and Vertically Integrated LED-on-FET Device Based on a Novel GaN Epitaxial Structure-Reference-Cited by-同舟云学术

Monolithically and Vertically Integrated LED-on-FET Device Based on a Novel GaN Epitaxial Structure

Published:2023-12 Issue:12 Volume:70 Page:6393-6398
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Pan Kui¹,Zhang Kaixin¹,Deng Liying¹,Lin Chang¹,Li Yang¹,Liu Hengshan²,Zhang Fan²,Nie Junyang¹,Sun Jie¹^ORCID,Su Anjun³,Chen Nianrui³,Zhou Jun³,Yan Qun¹,Guo Tailiang¹

Affiliation:

1. National and Local United Engineering Laboratory of Flat Panel Display Technology, College of Physics and Information Engineering, Fuzhou University, Fuzhou, China

2. Fujian Prima Optoelectronics Company Ltd., Fuzhou, China

3. Changsha Xiangji Haidun Technology Company Ltd., Changsha, China

Funder

Hunan Provincial Project

Fujian Provincial Projects

Mindu Projects

National Key Research and Development Program of China

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/16/10328902/10284769.pdf?arnumber=10284769

Reference22 articles.

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3. Monolithic integration of light-emitting diodes and power metal-oxide-semiconductor channel high-electron-mobility transistors for light-emitting power integrated circuits in GaN on sapphire substrate

4. Monolithic integration of GaN-based light-emitting diodes and metal-oxide-semiconductor field-effect transistors

5. The pn junction;neamen;Semiconductor Physics and Devices Basic Principles,2003