Monolithic integration of III-nitride voltage-controlled light emitters with dual-wavelength photodiodes by selective-area epitaxy
Author:
Funder
Research Grant Council of Hong Kong
Publisher
The Optical Society
Subject
Atomic and Molecular Physics, and Optics
Reference14 articles.
1. On-chip integration of suspended InGaN/GaN multiple-quantum-well devices with versatile functionalities
2. On-chip photonic system using suspended p-n junction InGaN/GaN multiple quantum wells device and multiple waveguides
3. Monolithic integration of nitride light emitting diodes and photodetectors for bi-directional optical communication
4. Monolithic integration of nitride-based transistor with Light Emitting Diode for sensing applications
5. Monolithic integration of light-emitting diodes and power metal-oxide-semiconductor channel high-electron-mobility transistors for light-emitting power integrated circuits in GaN on sapphire substrate
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