Monolithically GaN-Based Optocoupler With Chip Scaling-Reference-Cited by-同舟云学术

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Monolithically GaN-Based Optocoupler With Chip Scaling

Published:2023-09 Issue:9 Volume:13 Page:1353-1359
ISSN:2156-3950
Container-title:IEEE Transactions on Components, Packaging and Manufacturing Technology
language:
Short-container-title:IEEE Trans. Compon., Packag. Manufact. Technol.

Author:

Liou Chengshiun¹^ORCID,Tsou Chingfu²^ORCID

Affiliation:

1. Ph.D. Program of Electrical and Communications Engineering, Feng Chia University, Taichung, Taiwan

2. Department of Automatic Control Engineering, Feng Chia University, Taichung, Taiwan

Funder

Ministry of Science and Technology (MOST) of Taiwan

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Industrial and Manufacturing Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/5503870/10287668/10233065.pdf?arnumber=10233065

Reference20 articles.

1. Phototransistor noise model based on noise measurements on PNP PIN phototransistors

2. Low frequency noise as a tool to study optocouplers with phototransistors

3. On-chip photonic system using suspended p-n junction InGaN/GaN multiple quantum wells device and multiple waveguides;wang;Appl Phys Lett,2016

4. Photoresponse of (In,Ga)N–GaN Multiple-Quantum-Well Structures in the Visible and UVA Ranges

5. Enhanced light extraction using blue LED package consisting of TiO2-doped silicone layer and silicone lens;su;IEEE Electron Device Lett,2014

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