Ultrathin Body InAlN/GaN HEMTs for High-Temperature (600$^{\circ} {\rm C}$) Electronics-Reference-Cited by-同舟云学术

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Ultrathin Body InAlN/GaN HEMTs for High-Temperature (600$^{\circ} {\rm C}$) Electronics

Published:2013-04 Issue:4 Volume:34 Page:496-498
ISSN:0741-3106
Container-title:IEEE Electron Device Letters
language:
Short-container-title:IEEE Electron Device Lett.

Author:

Herfurth Patrick,Maier David,Lugani Lorenzo,Carlin Jean-Francois,Rosch Rudolf,Men Yakiv,Grandjean Nicolas,Kohn Erhard

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/55/6484111/06471737.pdf?arnumber=6471737

Cited by 29 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Enhancement-Mode AlInN/GaN High-Electron-Mobility Transistors Enabled by Thermally Oxidized Gates;IEEE Transactions on Electron Devices;2024-02

2. Temperature and field dependencies of current leakage mechanisms in IrOx contacts on InAlN/GaN heterostructures;Applied Physics Letters;2023-10-09

3. Evolution and influence of GaN/AlN heterointerface during the thinning process of GaN film;Applied Surface Science;2023-01

4. A Miniaturized Wireless Passive Frequency Selective Surface Sensor for High-Temperature Applications;IEEE Sensors Journal;2022-12-01

5. Impact of the Channel Thickness on Electron Confinement in MOCVD‐Grown High Breakdown Buffer‐Free AlGaN/GaN Heterostructures;physica status solidi (a);2022-11-03

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