Reversal of Band-Ordering Leads to High Hole Mobility in Strained <i>p</i>-type Scandium Nitride-Reference-Cited by-同舟云学术

Reversal of Band-Ordering Leads to High Hole Mobility in Strained p-type Scandium Nitride

Published:2023-08-29 Issue:17 Volume:23 Page:8211-8217
ISSN:1530-6984
Container-title:Nano Letters
language:en
Short-container-title:Nano Lett.

Author:

Rudra Sourav¹²,Rao Dheemahi¹²,Poncé Samuel³,Saha Bivas¹²⁴^ORCID

Affiliation:

1. Chemistry and Physics of Materials Unit, Jawaharlal Nehru Centre for Advanced Scientific Research, Bangalore 560064, India

2. International Centre for Materials Science, Jawaharlal Nehru Centre for Advanced Scientific Research, Bangalore 560064, India

3. European Theoretical Spectroscopy Facility, Institute of Condensed Matter and Nanosciences, Université Catholique de Louvain, Chemin des Étoiles 8, B-1348, Louvain-la-Neuve, Belgium

4. School of Advanced Materials (SAMat), Jawaharlal Nehru Centre for Advanced Scientific Research, Bangalore 560064, India

Funder

Science and Engineering Research Board

Fonds De La Recherche Scientifique - FNRS

Jawaharlal Nehru Centre for Advanced Scientific Research

Human Resource Development Group

Publisher

American Chemical Society (ACS)

Subject

Mechanical Engineering,Condensed Matter Physics,General Materials Science,General Chemistry,Bioengineering

Link

https://pubs.acs.org/doi/pdf/10.1021/acs.nanolett.3c02350

Reference48 articles.

1. Nobel Lecture: Background story of the invention of efficient blue InGaN light emitting diodes

2. Monolithic integration of light-emitting diodes and power metal-oxide-semiconductor channel high-electron-mobility transistors for light-emitting power integrated circuits in GaN on sapphire substrate

3. Metal-interconnection-free integration of InGaN/GaN light emitting diodes with AlGaN/GaN high electron mobility transistors

4. Fabrication of Light-Emitting AlGaN/GaN High Electron Mobility Transistors with a Single Quantum Well Inserted

5. The early history of the high electron mobility transistor (HEMT)

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