Nobel Lecture: Background story of the invention of efficient blue InGaN light emitting diodes
Author:
Funder
Nichia Chemical Corporation
Publisher
American Physical Society (APS)
Subject
General Physics and Astronomy
Link
http://harvest.aps.org/v2/journals/articles/10.1103/RevModPhys.87.1139/fulltext
Reference43 articles.
1. Effects of the buffer layer in metalorganic vapour phase epitaxy of GaN on sapphire substrate
2. P-Type Conduction in Mg-Doped GaN Treated with Low-Energy Electron Beam Irradiation (LEEBI)
3. Metalorganic vapor phase epitaxial growth of a high quality GaN film using an AlN buffer layer
4. Electron transport in unipolar InGaN/GaN multiple quantum well structures grown by NH3 molecular beam epitaxy
5. Spontaneous emission of localized excitons in InGaN single and multiquantum well structures
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