Dynamically stable gallium-induced 3×3-SiC (0001) surface for two-dimensional GaN nucleation by molecular-beam epitaxy
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1650900
Reference13 articles.
1. III–nitrides: Growth, characterization, and properties
2. Removal of polishing-induced damage from 6H-SiC(0001) substrates by hydrogen etching
3. Influence of AlN nucleation layers on growth mode and strain relief of GaN grown on 6H–SiC(0001)
4. Unoccupied surface state on the (√3 × √3) R30° of 6H-SiC(0001)
5. Adsorption and desorption kinetics of gallium atoms on6H−SiC(0001)surfaces
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1. Kinetics of Ga and In desorption from (7×7) Si(111) and (3×3) 6H-SiC(0001) surfaces;Surface Science;2008-01
2. Substrate-dependent wetting layer formation during GaN growth: Impact on the morphology of the films;Journal of Applied Physics;2007-08-15
3. Impact of 4H– and 6H–SiC(0001) nitridation on Ga wetting layer development and GaN growth by molecular beam epitaxy;Applied Physics Letters;2006-07-10
4. Buffer free MOCVD growth of GaN on 4H-SiC: Effect of substrate treatments and UV-photoirradiation;physica status solidi (a);2006-05
5. Reduction of dislocations in GaN epilayers using templated three-dimensional coherent nanoislands;Applied Physics Letters;2005-05-09
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