Impact of 4H– and 6H–SiC(0001) nitridation on Ga wetting layer development and GaN growth by molecular beam epitaxy
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2220007
Reference15 articles.
1. Heteroepitaxial Growth of GaN on 6H-SiC(0001) by Plasma-Assisted Molecular Beam Epitaxy
2. Structural Properties of GaN Buffer Layers on 4H-SiC(0001) Grown by Plasma-Assisted Molecular Beam Epitaxy for High Electron Mobility Transistors
3. Buffer-layer-free growth of high-quality epitaxial GaN films on 4H-SiC substrate by metal-organic chemical vapor deposition
4. Dynamically stable gallium-induced 3×3-SiC (0001) surface for two-dimensional GaN nucleation by molecular-beam epitaxy
5. Nucleation and growth of GaN layers on GaAs, Si, and SiC substrates
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1. Fully-Vertical GaN-on-SiC Schottky Barrier Diode: Role of Conductive Buffer Structure;IEEE Transactions on Electron Devices;2023-02
2. High quality GaN-on-SiC with low thermal boundary resistance by employing an ultrathin AlGaN buffer layer;Applied Physics Letters;2021-02-01
3. X-ray photoelectron spectroscopy studies of nitridation on 4H-SiC (0001) surface by direct nitrogen atomic source;Applied Physics Letters;2008-03-03
4. Kinetics of Ga and In desorption from (7×7) Si(111) and (3×3) 6H-SiC(0001) surfaces;Surface Science;2008-01
5. Characteristics of InN grown on SiC under the In-rich regime by molecular beam heteroepitaxy;Applied Physics Letters;2007-01
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