X-ray photoelectron spectroscopy studies of nitridation on 4H-SiC (0001) surface by direct nitrogen atomic source
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2892036
Reference23 articles.
1. Characterization and modeling of the nitrogen passivation of interface traps in SiO2/4H–SiC
2. High-carbon concentrations at the silicon dioxide–silicon carbide interface identified by electron energy loss spectroscopy
3. Electrical, structural, and chemical analysis of silicon carbide-based metal-oxide-semiconductor field-effect-transistors
4. Modified Deal Grove model for the thermal oxidation of silicon carbide
5. SiC/SiO2 interface-state generation by electron injection
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