Direct n- to p-Type Channel Conversion in Monolayer/Few-Layer WS2 Field-Effect Transistors by Atomic Nitrogen Treatment-Reference-Cited by-同舟云学术

Direct n- to p-Type Channel Conversion in Monolayer/Few-Layer WS2 Field-Effect Transistors by Atomic Nitrogen Treatment

Published:2018-03-05 Issue:3 Volume:12 Page:2506-2513
ISSN:1936-0851
Container-title:ACS Nano
language:en
Short-container-title:ACS Nano

Author:

Tang Baoshan¹²,Yu Zhi Gen³^ORCID,Huang Li⁴^ORCID,Chai Jianwei¹,Wong Swee Liang¹^ORCID,Deng Jie¹,Yang Weifeng¹^ORCID,Gong Hao²^ORCID,Wang Shijie¹,Ang Kah-Wee⁴^ORCID,Zhang Yong-Wei³,Chi Dongzhi¹^ORCID

Affiliation:

1. Institute of Materials Research and Engineering, A*STAR (Agency for Science, Technology and Research), 2 Fusionopolis Way, Innovis, 138634 Singapore

2. Department of Materials Science and Engineering, National University of Singapore, 117576 Singapore

3. Institute of High Performance Computing, A*STAR (Agency for Science, Technology and Research), 1 Fusionopolis Way, Connexis North, 138632 Singapore

4. Department of Electrical and Computer Engineering, National University of Singapore, 117576 Singapore

Funder

Ministry of Education - Singapore

Agency for Science, Technology and Research

Publisher

American Chemical Society (ACS)

Subject

General Physics and Astronomy,General Engineering,General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/acsnano.7b08261

Reference50 articles.

1. Single-Layer MoS2 Phototransistors