Atomically Resolved Defect-Engineering Scattering Potential in 2D Semiconductors-Reference-Cited by-同舟云学术

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Atomically Resolved Defect-Engineering Scattering Potential in 2D Semiconductors

Published:2024-06-26 Issue:27 Volume:18 Page:17622-17629
ISSN:1936-0851
Container-title:ACS Nano
language:en
Short-container-title:ACS Nano

Author:

Chen Hao-Yu¹,Hsu Hung-Chang²,Liang Jhih-Yuan²,Wu Bo-Hong²,Chen Yi-Feng¹,Huang Chuan-Chun²,Li Ming-Yang³,Radu Iuliana P.³,Chiu Ya-Ping¹²⁴⁵^ORCID

Affiliation:

1. Graduate School of Advanced Technology, National Taiwan University, Taipei 10617, Taiwan

2. Department of Physics, National Taiwan University, Taipei 10617, Taiwan

3. Taiwan Semiconductor Manufacturing Company, Hsinchu 30078, Taiwan

4. Institute of Physics, Academia Sinica, Taipei 115201, Taiwan

5. Institute of Atomic and Molecular Sciences, Academia Sinica, Taipei 106319, Taiwan

Funder

National Taiwan University

National Science and Technology Council

Ministry of Education, Taiwan

Publisher

American Chemical Society (ACS)

Link

https://pubs.acs.org/doi/pdf/10.1021/acsnano.4c02066

Reference43 articles.

1. Progress, Challenges, and Opportunities in Two-Dimensional Materials Beyond Graphene

2. Defect engineering of two-dimensional transition metal dichalcogenides

3. Two-dimensional transition metal dichalcogenides: interface and defect engineering

4. Defect Engineering of Two-Dimensional Transition-Metal Dichalcogenides: Applications, Challenges, and Opportunities

5. Disorder in van der Waals heterostructures of 2D materials

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