Substitutional Doping Strategies for Fermi Level Depinning and Enhanced Interface Quality in WS<sub>2</sub>-Metal Contacts-Reference-Cited by-同舟云学术

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Substitutional Doping Strategies for Fermi Level Depinning and Enhanced Interface Quality in WS₂-Metal Contacts

Published:2024-05-31 Issue:6 Volume:6 Page:4587-4600
ISSN:2637-6113
Container-title:ACS Applied Electronic Materials
language:en
Short-container-title:ACS Appl. Electron. Mater.

Author:

Ghaffar Abdul¹^ORCID,Mohapatra Nihar Ranjan²^ORCID,Maezono Ryo¹^ORCID,Hongo Kenta³^ORCID

Affiliation:

1. School of Information Science, JAIST, Nomi 923-1211, Japan

2. Electrical Engineering, Indian Institute of Technology Gandhinagar, Gandhinagar, Gujarat 382355, India

3. Research Center for Advanced Computing Infrastructure, JAIST, Nomi 923-1211, Japan

Funder

Indian Space Research Organisation

Ministry of Education, Culture, Sports, Science and Technology

Science and Engineering Research Board

Air Force Office of Scientific Research

Japan Society for the Promotion of Science

Publisher

American Chemical Society (ACS)

Link

https://pubs.acs.org/doi/pdf/10.1021/acsaelm.4c00609

Reference70 articles.

1. Electronics and optoelectronics of two-dimensional transition metal dichalcogenides

2. Hysteresis in Single-Layer MoS2 Field Effect Transistors

3. Strong Light-Matter Interactions in Heterostructures of Atomically Thin Films

4. Single-Layer MoS2 Phototransistors

5. Improving gas sensing properties of graphene by introducing dopants and defects: a first-principles study

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1. Recent Excellent Optoelectronic Applications Based on Two-Dimensional WS2 Nanomaterials: A Review;Molecules;2024-07-16

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