Improvement of Interfacial Properties of 4H-SiC/SiO<sub>2</sub> by Nitrogen Plasma Treatment-Reference-Cited by-同舟云学术

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Improvement of Interfacial Properties of 4H-SiC/SiO₂ by Nitrogen Plasma Treatment

Published:2021-12-06 Issue: Volume: Page:
ISSN:
Container-title:2021 18th China International Forum on Solid State Lighting & 2021 7th International Forum on Wide Bandgap Semiconductors (SSLChina: IFWS)
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Author:

Li Guangrong,Zou Xian,Wang Weiping,Sun Yongqiang,Li Xu,Wu Yaping,Wu Zhiming,Kang Junyong

Funder

National Natural Science Foundation of China

National Science Fund for Excellent Young Scholars

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/9675142/9675144/09675178.pdf?arnumber=9675178

Reference19 articles.

1. Passivation of SiO2/4H–SiC interface defects via electron cyclotron resonance hydrogen–nitrogen mixed plasma pretreatment for SiC surface combined with post-oxidation annealing

2. Synergistic passivation effects of nitrogen plasma and oxygen plasma on improving the interface quality and bias temperature instability of 4H-SiC MOS capacitors

3. Chemical and electronic passivation of 4H-SiC surface by hydrogen-nitrogen mixed plasma

4. Interface states in MOS structures with 20–40 Å thick SiO2 films on nondegenerate Si

5. Efficient iterative schemes forab initiototal-energy calculations using a plane-wave basis set

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