High quality GaN-on-SiC with low thermal boundary resistance by employing an ultrathin AlGaN buffer layer-Reference-Cited by-同舟云学术

High quality GaN-on-SiC with low thermal boundary resistance by employing an ultrathin AlGaN buffer layer

Published:2021-02-01 Issue:5 Volume:118 Page:052104
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Feng Yuxia¹²,Sun Huarui³^ORCID,Yang Xuelin¹^ORCID,Liu Kang³,Zhang Jie¹,Shen Jianfei¹,Liu Danshuo¹,Cai Zidong¹,Xu Fujun¹^ORCID,Tang Ning¹^ORCID,Yu Tongjun¹^ORCID,Wang Xinqiang¹⁴^ORCID,Ge Weikun¹,Shen Bo¹⁴

Affiliation:

1. State Key Laboratory of Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing 100871, People's Republic of China

2. Key Laboratory of Optoelectronics Technology, Beijing University of Technology, Ministry of Education, Beijing 100124, China

3. School of Science and Ministry of Industry and Information Technology, Key Laboratory of Micro-Nano Optoelectronic Information System, Harbin Institute of Technology, Shenzhen 518055, China

4. Collaborative Innovation Center of Quantum Matter, Beijing 100871, People's Republic of China

Funder

National Key Research and Development Program of China

National Natural Science Foundation of China

Key Research and Development of Guangdong Province

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

https://aip.scitation.org/doi/pdf/10.1063/5.0037796

Reference34 articles.