Influence of AlN nucleation layers on growth mode and strain relief of GaN grown on 6H–SiC(0001)
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.123214
Reference14 articles.
1. Correlation of biaxial strains, bound exciton energies, and defect microstructures in gan films grown on AlN/6H-SiC(0001) substrates
2. Raman and photoluminescence studies of biaxial strain in GaN epitaxial layers grown on 6H–SiC
3. Trends in residual stress for GaN/AlN/6H–SiC heterostructures
4. Influence of substrate‐induced biaxial compressive stress on the optical properties of thin GaN films
5. Bulk and homoepitaxial GaN-growth and characterisation
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1. Enhanced Thermal Boundary Conductance across GaN/SiC Interfaces with AlN Transition Layers;ACS Applied Materials & Interfaces;2024-02-05
2. Nucleation control of high crystal quality heteroepitaxial Sc0.4Al0.6N grown by molecular beam epitaxy;Journal of Applied Physics;2023-09-08
3. Growth of high quality GaN on (0001) 4H-SiC with an ultrathin AlN nucleation layer;Journal of Crystal Growth;2023-04
4. Interface engineering moderated interfacial thermal conductance of GaN-based heterointerfaces;Acta Physica Sinica;2023
5. Ultrathin GaN film and AlGaN/GaN heterostructure grown on thick AlN buffer by MOCVD;Ceramics International;2022-12
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