Trends in residual stress for GaN/AlN/6H–SiC heterostructures
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.122597
Reference14 articles.
1. Absorption, Reflectance, and Luminescence of GaN Epitaxial Layers
2. Temperature dependence of interband transitions in GaN grown by metalorganic chemical vapor deposition
3. Intrinsic optical properties of GaN epilayers grown on SiC substrates: Effect of the built‐in strain
4. Variation of GaN valence bands with biaxial stress and quantification of residual stress
5. GaN thin films deposited via organometallic vapor phase epitaxy on α(6H)–SiC(0001) using high‐temperature monocrystalline AlN buffer layers
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1. Phase transition and bandgap engineering in B1-Al N alloys: DFT calculations and experiments;Applied Surface Science;2022-02
2. Optical and structural properties of AlN thin films deposited on different faces of sapphire substrates;Semiconductor Science and Technology;2021-03-04
3. High quality GaN-on-SiC with low thermal boundary resistance by employing an ultrathin AlGaN buffer layer;Applied Physics Letters;2021-02-01
4. Epitaxial GaN using Ga(NMe2)3 and NH3 plasma by atomic layer deposition;Journal of Materials Chemistry C;2020
5. Microstructural Characterization of GaN Grown on SiC;MICROSC MICROANAL;2019
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